MANUFACTURE OF BARRIER FILM

PROBLEM TO BE SOLVED: To provide a tungsten nitride thin film which is low in specific resistance and little in variation. SOLUTION: Before a nitride thin film (tungsten nitride thin film) 24 made of a high-melting point metal is formed on the surface of a substrate 20, the surface of the substrate...

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Bibliographic Details
Main Author HARADA MASAMICHI
Format Patent
LanguageEnglish
Published 29.08.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a tungsten nitride thin film which is low in specific resistance and little in variation. SOLUTION: Before a nitride thin film (tungsten nitride thin film) 24 made of a high-melting point metal is formed on the surface of a substrate 20, the surface of the substrate is cleaned by a plasma containing an ionized nitride or hydrogen. Even with a CVD process at low temperature, the growth of a nitride thin film 24 can be started at once after cleaning, and a barrier film 33 of good quality can be also formed. If the kind of reductive gas to be introduced is changed, a high-melting point metal thin film (tungsten thin film) 25 can be formed on the surface of the nitride thin film 24, resulting in the barrier film 33 with a laminated structure.
Bibliography:Application Number: JP19990038045