CVD DEVICE AND PRODUCTION OF MAGNETIC RECORDING MEDIUM
PROBLEM TO BE SOLVED: To provide a thermal filament-plasma CVD device improved so as to obtain a high film forming rate. SOLUTION: In a thermal filament-plasma CVD device in which the state of a gaseous starting material for film formation is made into the one of plasma by discharge between filament...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
15.08.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a thermal filament-plasma CVD device improved so as to obtain a high film forming rate. SOLUTION: In a thermal filament-plasma CVD device in which the state of a gaseous starting material for film formation is made into the one of plasma by discharge between filamentlike cathode and anode heated under a vacuum condition in a film forming chamber, and then, the plasma is acceleratedly bombared against the surface of a substrate by a minus potential to form a film, a funnellike anode 3 is arranged at least either position confronted with the substrate 4 in the film forming chamber 1. |
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Bibliography: | Application Number: JP19990025038 |