MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Author: MIZUKOSHI NORIO
• Format: Patent
• Language: English
• Published: 04.08.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To prevent dishing by allowing a mask by comprising a pair of patterns of specified width which is, between a pair of grooves, formed on an insulating film in a region away from the groove by a distance which allows alignment precision measurement for the mask, and a pattern which covers a trench and a region of a specified width from the end part of the trench. SOLUTION: A mask formed on an insulating film 5 comprises a pair of patterns 101 of a specified width (b) which is formed, between a pair of grooves 7, on the insulating film 5 in a region away from the groove 7 by such distance (d) which allows alignment precision measurement for the mask, and a pattern 102 which covers a trench 4 and a region of a specified width (f) from the end part of the trench 4. After alignment of the mask 6, the insulating film 5 is removed by anisotropic etching. Then the mask 6 is removed and flattened by CMP method. Thus, the dishing of an embedded insulating film is prevented. Further, drop of yield caused by remaining of the insulating film on the substrate is suppressed.