THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE

• Main Authors: NAGAHIRO NORIO, CHO KOYU
• Format: Patent
• Language: English
• Published: 14.07.2000
• Edition: 7
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; LABELS OR NAME-PLATES; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEALS; SEMICONDUCTOR DEVICES; SIGNS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To prevent defective pixels from occurring by a method wherein a light blocking layer is arranged on an interlayer insulating film covering one of a pair of low-concentration impurity regions, formed of the same layer with a source/drain electrode, and then is separated from the source/drain electrode. SOLUTION: A polycrystalline silicon film 2 is formed on the surface of a non-alkaline plate 1, and a gate insulating film 3 and a gate electrode G are laminated on the intermediate surface of the silicon film 2. An interlayer insulating film 5 is arranged so as to cover the gate electrode G, and an electrode layer of single-layered or multilayered structure is formed thereon. One of a pair of regions 2b of low-impuirity concentration of the polycrystalline silicon film 2 is covered with a light blocking film 7b, and the light blocking film 7b is formed of the same layer with a source/drain electrode, 7a and separated from the source/drain electrode 7a. By this setup, defective pixels can be prevented from occurring even if a TFT substrate gets misaligned with a black matrix.