VAPOR PHASE DOPING APPARATUS AND VAPOR PHASE DOPING METHOD

PROBLEM TO BE SOLVED: To provide a vapor phase doping apparatus and a method with which in-plane uniformity in an impurity diffused layer having a shallow joint can be improved. SOLUTION: A semiconductor substrate 11 is placed on a susceptor 10 within a reactor furnace 1, and a PH3 gas is fed into t...

Full description

Saved in:
Bibliographic Details
Main Author ATSUMI KENJI
Format Patent
LanguageEnglish
Published 14.07.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a vapor phase doping apparatus and a method with which in-plane uniformity in an impurity diffused layer having a shallow joint can be improved. SOLUTION: A semiconductor substrate 11 is placed on a susceptor 10 within a reactor furnace 1, and a PH3 gas is fed into the reactor furnace 1 through a quartz gas nozzle 12, thereby doping the substrate 11 with P. In this processing, the PH3 gas jetted out of a gas diffusion hole 12a of the nozzle 12 is allowed to reflect at the inner wall of the reaction furnace 1, and the gas stream is directed at an angle of 45 deg. to 90 deg., preferably at an angle vertical or approximately vertical to the surface of the substrate 11.
Bibliography:Application Number: JP19980367230