THIN FILM TRANSISTOR AND ITS MANUFACTURE

• Main Authors: SATO TAKESHI, KAWACHI GENSHIROU
• Format: Patent
• Language: English
• Published: 23.06.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide a thin film transistor of high drive power. SOLUTION: This is examples of a thin film transistor and a thin film transistor substrate. An NMOS thin film transistor 11 in which a source 3 and a drain 4, which are phosphorus-doped and consist of a polycrystalline Si film of 30 nm or less in film thickness, on a polycrystalline Si film 2 consisting of a polycrystalline Si film, which is adjacent to a channel 1 formed under a gate insulation film 5 consisting of SiO2 and a gate 6 consisting of a metal film, are formed over a substrate 20 consisting of glass and a buffer layer 21 consisting of an SiO2 film, and a PMOS thin film transistor 12 provided with a source 7 and a drain 8, which are boron-doped and consists of a polycrystalline Si film of 30 nm or less, are formed on the same substrate.