TRANSPARENT CONDUCTIVE FILM
PROBLEM TO BE SOLVED: To obtain a transparent conductive film which has lower resistance and little variance in the etching rate, which can be easily patterned, and which shows uniform characteristics all over a large area by controlling the film thickness of the transparent conductive film formed b...
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Main Author | |
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Format | Patent |
Language | English |
Published |
26.05.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a transparent conductive film which has lower resistance and little variance in the etching rate, which can be easily patterned, and which shows uniform characteristics all over a large area by controlling the film thickness of the transparent conductive film formed by sputtering and heat treating to less than a specified value. SOLUTION: This liquid crystal display device 24 consists of a pair of substrates 25, 26 and a liquid crystal layer 23 with a spacer held between the substrates. One substrate 26 as an array substrate has signal electrode lines, scanning electrode lines, and pixel electrodes 14 consisting of an ITO film having 400 film thickness on near the crossing points of the lines above described as switching elements through TFT arranged in a matrix. The pixel electrode 14 comprising a transparent conductive film is formed by sputtering in an atmosphere essentially containing a hydrogen compd. and at least one gas of Ar and Kr. The aligned face of the pixel electrode 14 is the (222) plane. When the pixel electrode 14 is formed to <800 film thickness, good results are obtd., and especially <=400 thickness is preferable. |
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Bibliography: | Application Number: JP19980318249 |