SEMICONDUCTOR LASER DIODE

PROBLEM TO BE SOLVED: To enable erase of a diffraction grating and a change in the diffraction grating by a method wherein a light refractive index material having an oscillation wavelength, which is decided by the period of the diffraction grating, is subject to light irradiation to change the refr...

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Bibliographic Details
Main Authors YAMADA HIROHITO, RICHARD RINKE
Format Patent
LanguageEnglish
Published 07.04.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:PROBLEM TO BE SOLVED: To enable erase of a diffraction grating and a change in the diffraction grating by a method wherein a light refractive index material having an oscillation wavelength, which is decided by the period of the diffraction grating, is subject to light irradiation to change the refractive index of the diffraction grating. SOLUTION: An LD(laser Diode) 10, which is constituted of a DBR (Distributed Bragg Reflector) mirror 11, is formed of a light refractive index material with a diffraction grating written therein. A light beam from an LD surface 13 is irradiated toward within the mirror 11 through a lens 12 and an optical coupling between the LD 10 and the mirror 12 is made to change the refractive index of the diffraction grating. While the mirror 11 is maintained at a low temperature using a low-temperature tank 16, a current 15 is injected in the LD 10 to obtain a laser oscillation to generate an output beam 14 of a wavelength to coincide with the period of the diffraction grating. Moreover, the diffraction grating is contrived so that the grating can be erased at a high temperature using a high-temperature tank 17.
Bibliography:Application Number: JP19990140030