MANUFACTURE OF SEMICONDUCTOR DEVICE

• Main Authors: KUBO HIROTOSHI, KUWAKO EIICHIRO
• Format: Patent
• Language: English
• Published: 31.03.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To save labor in a manufacturing process and greatly reduce the manufacturing cost by omitting a photomask process which was necessary for forming a thick oxide film and a source region. SOLUTION: In this method, after a gate electrode 13 is formed selectively, a channel region 16 and an impurity diffused region 17A are formed and an NSG film 15A is further formed over the entire surface, and a source region is formed by dividing the impurity diffused region 17A into parts at the same time as with formation of a gate contact 0P. Therefore, the photomask process which was necessary for forming a source region can be eliminated. Therefore, a photomask is required in only three processes of formation of a patterning mask for forming a gate electrode, formation for forming an opening 0P for making contact with a gate electrode (formation of a recessed part 0B1 for forming a source region) and the mask formation for patterning a wiring layer. Since only three photomasks need to be used in all in this way, a mask process and a process involved therein can be eliminated.