CUTTING MIRROR WORK METHOD AND DEVICE FOR SINGLE CRYSTAL SiC

• Main Authors: NAGATO NOBUYUKI, OMORI HITOSHI, KOYANAGI NAOKI, ITO NOBUHIDE, YAMAGATA YUTAKA, YANO KOTARO
• Format: Patent
• Language: English
• Published: 21.03.2000
• Edition: 7
• Subjects: DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

PROBLEM TO BE SOLVED: To efficiently cut out an ingot of single crystal SiC into a flat plate shape, further with a cut section thereof capable of being finished into excellent flatness approximate to a mirror surface. SOLUTION: This device comprises a metal bond grinding wheel 10 consisting of a flat plate part 10a rotated around an axial center Z and a tapered part 10b provided outside the flat plate part to be formed with the outward gradually thin, electrode 13 provided oppositely with a space apart from the metal bond grinding wheel, voltage applying means 12 making the metal bond grinding wheel serve as an anode to apply DC pulse voltage across itself and the electrode, machining fluid supply means 14 supplying a conductive machining fluid 15 between the metal bond grinding wheel and the electrode, and a grinding wheel moving means 16 moving the metal bond grinding wheel in a direction orthogonal to its axial center. In this way, an ingot 1 of a single crystal SiC is cut off by the tapered part 10b of the metal bond grinding wheel, and a cut section is mirror finished by the flat plate part 10a.