LIGHT-EMITTING DEVICE OF NITRIDE SEMICONDUCTOR

• Main Author: KISHI AKITO
• Format: Patent
• Language: English
• Published: 18.02.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To eliminate the possibility of preventing the degradation of an element due to static electricity or various causes in a process of applying a light emitting device to various products by a method, wherein a material which prevents a nonconductor from being charged with electricity is applied to at least a part of the light emitting device. SOLUTION: A light emitting device 101 is constituted, in such a way that a nitride semiconductor light emitting element is sealed with a molding member 105, such as a resin or the like and that the light emitting element and lead electrodes 103 are connected electrically by wires 102. An antistatic material is not especially limited, as long as it is a material which prevents the light emitting device 101 from being charged with electricity and which does not lower directionality characteristic. For example, at least one kind out of a surfactant, a metal, an ITO and the like can be used. A process in which the antistatic material is applied to the light emitting device 101 may be process, in which at least a material as a nonconductor is installed so as to be continued to the light emitting element. In order to maintain the performance of the element or to simplify a production process, it is preferable that the process is executed, immediately before or immediately after the process in which tie bars are cut.