SEMICONDUCTOR MANUFACTURING DEVICE

• Main Author: AONO MITSUHIRO
• Format: Patent
• Language: English
• Published: 18.02.2000
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve uniformity of a resist film thickness on a Si wafer, dimensional accuracy in a PEB process, and the yield of a semiconductor device, by means of preventing an uneven exhaustion with a straightening vane for regulating evacuation over a wafer in a heat treatment unit, resulting the controlled temperature distribution in the heat treatment unit, vaporization of an organic solvent in a resist solvent, emission of gas volume, and uniform concentration distribution of a diffused photosensitive photolysis emulsion in the PEB process. SOLUTION: A straightening vane 5 for controlling evacuation is arranged with a predetermined gap kept over a semiconductor wafer 2 put in a heat treatment unit. The vane has at least one or more holes on it decided by the diameter of the semiconductor wafer 2 and a variable mechanism for controlling the gap between the semiconductor wafer 2 and the vane. The diameter of the one or more holes provided on the straitening vane 5 are determined by a combination of an evacuation volume of the heat treatment unit and an installation position of the evacuation unit as well as the diameter of the semiconductor wafer 2.