ION IMPLANTER AND ION IMPLANTING METHOD

PROBLEM TO BE SOLVED: To provide an ion implanter and an ion implanting method having little error in energy contamination quantity between measurement and actual implantation. SOLUTION: A nitrogen feed section 31 feeding a controlled quantity of nitrogen into a process chamber 21 is provided. When...

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Bibliographic Details
Main Author MURAYAMA EIICHI
Format Patent
LanguageEnglish
Published 28.01.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an ion implanter and an ion implanting method having little error in energy contamination quantity between measurement and actual implantation. SOLUTION: A nitrogen feed section 31 feeding a controlled quantity of nitrogen into a process chamber 21 is provided. When ions 12 are implanted into a processed body, a quantity of nitrogen corresponding to the quantity of the gas discharged from resist can be fed into the process chamber 21, and the energy contamination quantity can be measured in advance in the barometric state similar to the state that ions 12 are actually implanted into the processed body. A semiconductor device having a characteristic similar to the desired characteristic or the like can be manufactured.
Bibliography:Application Number: JP19980211981