PROCEDIMENTO DI CONTROLLO PER COMPONENTI A SEMICONDUTTORI

The method involves detecting a first value of the thermal resistance of the component by applying at least one load pulse with a corresponding first power transfer to the component (3). A second value of the thermal resistance is determined by applying at least a second predefined load pulse with a...

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Bibliographic Details
Main Author MEINDERS HORST
Format Patent
LanguageItalian
Published 22.11.1999
Edition4
Subjects
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Summary:The method involves detecting a first value of the thermal resistance of the component by applying at least one load pulse with a corresponding first power transfer to the component (3). A second value of the thermal resistance is determined by applying at least a second predefined load pulse with a second, higher energy transfer to the component The thermal resistance values determined for the two cases are correlated and an indication of the presence or absence of a defect is established by evaluating the correlation.
Bibliography:Application Number: IT1998MI01128