PROCEDIMENTO DI CONTROLLO PER COMPONENTI A SEMICONDUTTORI
The method involves detecting a first value of the thermal resistance of the component by applying at least one load pulse with a corresponding first power transfer to the component (3). A second value of the thermal resistance is determined by applying at least a second predefined load pulse with a...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | Italian |
Published |
22.11.1999
|
Edition | 4 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The method involves detecting a first value of the thermal resistance of the component by applying at least one load pulse with a corresponding first power transfer to the component (3). A second value of the thermal resistance is determined by applying at least a second predefined load pulse with a second, higher energy transfer to the component The thermal resistance values determined for the two cases are correlated and an indication of the presence or absence of a defect is established by evaluating the correlation. |
---|---|
Bibliography: | Application Number: IT1998MI01128 |