DISPOSITIVO PER PREPARARE CARBURO DI SILICIO MONOCRISTALLO

A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber....

Full description

Saved in:
Bibliographic Details
Main Authors TARENZI GIUSEPPE, KITOU YASUO, DE ANGELIS SONIA, PECCENATI AMBROGIO, KOJIMA JUN
Format Patent
LanguageItalian
Published 04.12.2010
Online AccessGet full text

Cover

More Information
Summary:A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle.
Bibliography:Application Number: IT2010MI00982