METODO DI PROGRAMMAZIONE DI MEMORIE MULTILIVELLO E RELATIVO CIRCUITO
The present invention relates to a method for programming a multilevel memory of the flash EEPROM type comprising a matrix of cells grouped in memory words. Advantageously according to the invention the method provides the simultaneous generation of a first programming voltage value (V PROG ) and a...
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Main Authors | , , , |
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Format | Patent |
Language | Italian |
Published |
29.01.2005
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Online Access | Get full text |
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Summary: | The present invention relates to a method for programming a multilevel memory of the flash EEPROM type comprising a matrix of cells grouped in memory words. Advantageously according to the invention the method provides the simultaneous generation of a first programming voltage value (V PROG ) and a second verify voltage value (V VER ), suitable to bias word lines (WLS) of the above memory matrix, respectively during programming and verify operations of the memory itself. The present invention also relates to a circuit implementing the above method. |
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Bibliography: | Application Number: IT2004MI02071 |