METODO DI PROGRAMMAZIONE DI MEMORIE MULTILIVELLO E RELATIVO CIRCUITO

The present invention relates to a method for programming a multilevel memory of the flash EEPROM type comprising a matrix of cells grouped in memory words. Advantageously according to the invention the method provides the simultaneous generation of a first programming voltage value (V PROG ) and a...

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Bibliographic Details
Main Authors LISI CARLO, CONFALONIERI EMANUELE, FERRARIO MARCO, DEL GATTO NICOLA
Format Patent
LanguageItalian
Published 29.01.2005
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Summary:The present invention relates to a method for programming a multilevel memory of the flash EEPROM type comprising a matrix of cells grouped in memory words. Advantageously according to the invention the method provides the simultaneous generation of a first programming voltage value (V PROG ) and a second verify voltage value (V VER ), suitable to bias word lines (WLS) of the above memory matrix, respectively during programming and verify operations of the memory itself. The present invention also relates to a circuit implementing the above method.
Bibliography:Application Number: IT2004MI02071