CELLA EEPROM CON OTTIME PRESTAZIONI DI CORRENTE

An EEPROM cell with improved current performance, the EEPROM cell having: a selection transistor with a drain region, a source region and a control gate, a memory cell having a drain region, a source region, a control gate and a floating gate, the drain region of the memory cell and said source regi...

Full description

Saved in:
Bibliographic Details
Main Authors PATELMO MATTEO, DALLA LIBERA GIOVANNA
Format Patent
LanguageItalian
Published 17.06.2002
Edition4
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:An EEPROM cell with improved current performance, the EEPROM cell having: a selection transistor with a drain region, a source region and a control gate, a memory cell having a drain region, a source region, a control gate and a floating gate, the drain region of the memory cell and said source region of the selection transistor are connected together, and the source and drain regions of the memory cell and the source and drain regions of the selection transistor share an active area with a pair of sides that linearly converge from one end to the other end
Bibliography:Application Number: IT1999MI01617