STRATI EPITASSIALI CON QUANTI TA' CONTROLLATE DI AZOTO CRESCIUTI SU SUBSTRATI DI SILICIO

• Main Authors: BERETTA GIORGIO, FERLA GIUSEPPE
• Format: Patent
• Language: Italian
• Published: 22.02.1990
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A description is given of a substrate of semiconductor material for manufacture of semiconductor devices, consisting of a first layer of sylicon single crystal on which at least a second layer of silicon single crystal is grown epitaxially, said second layer containing a quantity of nitrogen compris...