STRATI EPITASSIALI CON QUANTI TA' CONTROLLATE DI AZOTO CRESCIUTI SU SUBSTRATI DI SILICIO

A description is given of a substrate of semiconductor material for manufacture of semiconductor devices, consisting of a first layer of sylicon single crystal on which at least a second layer of silicon single crystal is grown epitaxially, said second layer containing a quantity of nitrogen compris...

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Bibliographic Details
Main Authors BERETTA GIORGIO, FERLA GIUSEPPE
Format Patent
LanguageItalian
Published 22.02.1990
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A description is given of a substrate of semiconductor material for manufacture of semiconductor devices, consisting of a first layer of sylicon single crystal on which at least a second layer of silicon single crystal is grown epitaxially, said second layer containing a quantity of nitrogen comprised between 0.5.10 and 10.10 atoms/cm , the result of which is to make available, for subsequent manufacturing stages of the devices, wafers of silicon possessing highly elastic mechanical characteristics and free of lattice defects in the epitaxial layers.
Bibliography:Application Number: IT19860006616