MOSFET DI POTENZA DOTATO DI UNA REGIONE ANODICA

A vertical MOSFET device having source, body and drain regions, includes an anode region in series with the drain region. The source, body and drain regions have a first forward current gain and the anode, drain and body regions have a second forward current gain, such that the sum of the current ga...

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Bibliographic Details
Main Authors BECKE HANS WERNER, WHEATLEY CARL FRANKLIN JR
Format Patent
LanguageItalian
Published 31.08.1988
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A vertical MOSFET device having source, body and drain regions, includes an anode region in series with the drain region. The source, body and drain regions have a first forward current gain and the anode, drain and body regions have a second forward current gain, such that the sum of the current gains is less than unity. The anode region provides minority carrier injection into the drain region, enhancing device performance in power applications.
Bibliography:Application Number: IT19810020225