"THIN FILM DEPOSITION METHOD"

• Main Authors: DURANDEAU ANNE, NADAUD NICOLAS, KHARCHENKO ANDRIY
• Format: Patent
• Language: English
• Published: 21.08.2015
• Subjects: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; THEIR RELEVANT APPARATUS; TRANSPORTING

The subject of the invention is a process for obtaining a substrate coated on at least part of its surface with at least one film of oxide of a metal M the physical thickness of which is 30 nm or less, said oxide film not being part of a multilayer comprising at least one silver film, said process comprising the following steps: - at least one intermediate film of a material chosen from the metal M, a nitride of the metal M, a carbide of the metal M and an oxygen-substoichiometric oxide of the metal M is deposited by sputtering, said intermediate film not being deposited above or beneath a titanium-oxide-based film, the physical thickness of said intermediate film being 30 nm or less; and - at least part of the surface of said intermediate film is oxidized using a heat treatment, during which said intermediate film is in direct contact with an oxidizing atmosphere, especially air, the temperature of said substrate during said heat treatment not exceeding 150oC.