Process for the manufacture of a multilayer photo+voltaic device

Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of the semiconductor, substantially free of oxide groups, heating to form a dried layer, removing the dried layer, washing the...

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Bibliographic Details
Main Authors OKTIK SENER, PATTERSON MICHAEL HOLMES, OZSAN MEHMET ERSIN, JOHNSON DANIEL ROBERT
Format Patent
LanguageEnglish
Published 26.05.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of the semiconductor, substantially free of oxide groups, heating to form a dried layer, removing the dried layer, washing the surface to remove residual by-products and drying the surface.
Bibliography:Application Number: IN1992DEL1028