A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR SI1 XGEX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A PH VALUE OF 3.0 TO 5.5

• Main Authors: GILLOT CHRISTOPHE, NOLLER BASTIAN MARTEN, DRESCHER BETTINA
• Format: Patent
• Language: English
• Published: 08.05.2015
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

1 xxA process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGe material with 0.1 = x < 1 in the presence of a chemical mechanical polishing (CMP) composition having a pH value in the range of from 3.0 to 5.5 and comprising: (A) inorganic particles organic particles or a mixture or composite thereof (B) at least one type of an oxidizing agent and (C) an aqueous medium.