Connection substrate

A connection substrate 13 includes a base material 130 formed by stacking a plurality of dielectric layers 130a to 130f and a plurality of through conductors 20 provided penetrating through the dielectric layers 130c to 130f adjacent to each other. A plurality of radiation shielding films 21a to 23...

Full description

Saved in:
Bibliographic Details
Main Authors FUMIYUKI TOKURA, TAKASHI TONBE, SHIGERU SUZUKI, MITSUTOSHI SUGIYA
Format Patent
LanguageEnglish
Hebrew
Published 31.05.2015
Subjects
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
TESTING
Online AccessGet full text

Cover

More Information
Summary:A connection substrate 13 includes a base material 130 formed by stacking a plurality of dielectric layers 130a to 130f and a plurality of through conductors 20 provided penetrating through the dielectric layers 130c to 130f adjacent to each other. A plurality of radiation shielding films 21a to 23 a formed integrally with each of the plurality of through conductors 20 and separated from each other are provided at two or more interlayer parts in the dielectric layers 130c to 130f. A region PR1 of the radiation shielding film 21a (21b) formed integrally with one through conductor 20 in one interlayer part projected onto a virtual plane normal to a predetermined direction and a region of the radiation shielding film 22b or 22c (22c) formed integrally with another through conductor 20 in another interlayer part projected onto the virtual plane do not overlap each other. Accordingly, the readout circuits of an integrated circuit device can be protected from radiation, and an increase in parasitic capacitance can be suppressed.
Bibliography:Application Number: IL20120222083