ASYMMETRICAL MEMRISTOR

Embodiments of the present invention provide a memristor having a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer...

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Bibliographic Details
Main Authors HUSAR, Peter, WILLIAMSON, Adam, SCHUMANN, Lars, HILLER, Lars, HRSELMANN, Ingo, KLEFENZ, Frank, SCHOBER, Andreas
Format Patent
LanguageChinese
English
Published 02.12.2016
Subjects
ELECTRICITY
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Summary:Embodiments of the present invention provide a memristor having a first electrode, a second electrode and a memristive layer arranged between the first electrode and the second electrode. Thereby, the memristor is adapted to obtain an asymmetrical current density distribution in the memristive layer.
Bibliography:Application Number: HK20160104596