SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: FURUYAMA, HIDETO, SHIMADA, MIYOKO, KOJIMA, AKIHIRO, SUGIZAKI, YOSHIAKI, AKIMOTO, YOSUKE, TOMIZAWA, HIDEYUKI
• Format: Patent
• Language: Chinese; English
• Published: 26.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to one embodiment, a semiconductor light emitting device (1, 2 , 3, 5) includes a semiconductor layer (15), a p-side electrode (16), an n-side electrode (17), a fluorescent material layer (30) and a scattering layer (60). The semiconductor layer has a first surface (15a) and a second surface (15b) on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials (31) and a first bonding material (33). The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials (61) and a second bonding material (62). The scattering materials are configured to scatter radiated light of the light emitting layer (13). The second bonding material (62) integrates the scattering materials (61).