OPTICAL THIN FILM DEPOSITION DEVICE AND OPTICAL THIN FILM FABRICATION METHOD

• Main Authors: TAKANORI MURATA, YOUSONG JIANG, EKISHU NAGAE, TATSUYA HAYASHI, MAKOTO FURUKAWA, ICHIRO SHIONO, TADAYUKI SHIMIZU
• Format: Patent
• Language: English
• Published: 30.12.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

It is aimed at providing: an optical thin-film vapor deposition apparatus capable of producing an optical thin-film having excellent optical characteristics; and a production method of an optical thin-film having a higher performance with a lower production cost. The present invention provides an optical thin-film vapor deposition apparatus for vapor depositing a vapor deposition substance onto substance bodies (14) within a vacuum vessel (10), comprising: substance-body holding means (12) of a dome type disposed within the vacuum vessel (10) and configured to hold the substance bodies (14); rotating means configured to rotate the substance-body holding means (12); vapor depositing means (34) disposed oppositely to the substance bodies (14); an ion source (38) for irradiating ions to the substance bodies (14); and a neutralizer (40) for irradiating electrons to the substance bodies (14). The ion source (38) is disposed at a position: where an angle defined between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substance bodies (14), is made to be between 8° inclusive and 40° inclusive; and where a ratio of a distance in a vertical direction between (i) a center of rotational axis of the substance-body holding means (12), and (ii) a center of the ion source (38), relative to a diameter of the substance-body holding means (12), is made to be within a range between 0.5 inclusive and 1.2 inclusive.