ANTIREFLECTION COATINGS FOR USE IN PHOTOLITHOGRAPHY

Reflection of incident optical radiation (18) from a highly reflective metal layer (12), such as aluminum or titanium, into a photoresist layer (14) is reduced by interposing a layer of titanium nitride (16) between the metal and photoresist layers. The thickness of the TiN layer depends on the wave...

Full description

Saved in:
Bibliographic Details
Main Authors SLIWA, JACK, ARNOLD, WILLIAM H., III, FARNAAM, MOHAMMAD
Format Patent
LanguageEnglish
Published 31.05.1995
Edition6
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
AUXILIARY PROCESSES IN PHOTOGRAPHY
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Reflection of incident optical radiation (18) from a highly reflective metal layer (12), such as aluminum or titanium, into a photoresist layer (14) is reduced by interposing a layer of titanium nitride (16) between the metal and photoresist layers. The thickness of the TiN layer depends on the wavelength of the optical radiation used to expose the photoresist and on the optical properties of the underlying metal layer. Reflectance of less than about 2% may be achieved using the TiN layer in conjunction with aluminum and less than about 5% in conjunction with titanium, in accordance with the invention. If left in place after patterning an underlying aluminum layer, the TiN layer also serves to suppress hillock formation in the aluminum layer.
Bibliography:Application Number: GR19950400184T