Stacked fets with non-shared work function metals

A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first work function metal and the second FET device contains a second functional gate structure containing a s...

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Bibliographic Details
Main Authors Ruqiang Bao, Rishikesh Krishnan, Ruilong Xie, Julien Frougier, Balasubramanian Pranatharthiharan, Dechao Guo, Junli Wang
Format Patent
LanguageEnglish
Published 28.08.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first work function metal and the second FET device contains a second functional gate structure containing a second work function metal. In the structure, the first work function metal is absent from an area including the second work function metal, and vice versa. Thus, no shared work functional metal is present in the semiconductor structure.
Bibliography:Application Number: GB20240007430