Thin film transistor, thin film transistor substrate and display device

A thin film transistor comprising a first active layer 130, a first auxiliary gate electrode 151/152 and a first gate electrode 160, wherein the first active layer includes a first channel portion 103n, a first connection portion 131 that is in contact with one side of the first channel portion, and...

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Bibliographic Details
Main Authors Younghyun Ko, ChanYong Jeong, KyungChul Ok
Format Patent
LanguageEnglish
Published 21.06.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film transistor comprising a first active layer 130, a first auxiliary gate electrode 151/152 and a first gate electrode 160, wherein the first active layer includes a first channel portion 103n, a first connection portion 131 that is in contact with one side of the first channel portion, and a second connection portion 132 that is in contact with the other side of the first channel portion. The auxiliary gate electrode may be split into separate electrodes, therefore only overlapping the first gate electrode and active layer in distinct sections. This transistor arrangement produces a large s-factor and therefore a better gray scale. The transistor may be used in a display.
Bibliography:Application Number: GB20220015390