Radio frequency switch control circuitry

• Main Authors: Sachin Nagarajan, Abhishekh Devaraj, Yunyoung Choi, Florinel G Balteanu
• Format: Patent
• Language: English
• Published: 22.02.2023
• Subjects: BASIC ELECTRONIC CIRCUITRY; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRICITY; PULSE TECHNIQUE; TRANSMISSION

A level shifter 210 for a radio frequency (RF) switch comprises a first n-type level-shifting transistor 171 and a first n-type cascode transistor 181 connected in series between a negative charge pump voltage VNEG and an output providing a switch control signal SWCTLB. A first p-type level-shifting transistor 191 and a first p-type cascode transistor 193 are connected in series between a positive charge pump voltage VPOS and the output, and a second p-type cascode transistor 194, controlled by a switch enable signal SWEN, is provided between a regulated voltage VREG and a gate of the first n-type level shifting transistor. Additionally, a radio frequency switch system (Fig.9) and a mobile device (Fig.12) each include an RF switch (Fig.9, 291a..n) controlled by a switch control signal (Fig.9, SWCTLa..n), positive and negative charge pumps (Fig.9, 293, 294), a voltage regulator (Fig.9, 297), and the level shifter operable to level shift a switch enable signal (Fig.9, SWENa..n) to generate the switch control signal. In the mobile device the charge pumps and voltage regulator are included in a power management system and the RF switch is in a front end system.