A graphene substrate and method of forming the same

An epitaxial graphene layer is provided on structure directly on a metal oxide layer formed by atomic layer deposition (ALD). The metal oxide layer is grown directly on a support layer; wherein the metal oxide layer has a thickness of less than 5 nm and is selected from the group consisting of Al2O3...

Full description

Saved in:
Bibliographic Details
Main Authors Ivor Guiney, Jaspreet Kainth, Sebastian Dixon
Format Patent
LanguageEnglish
Published 18.01.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An epitaxial graphene layer is provided on structure directly on a metal oxide layer formed by atomic layer deposition (ALD). The metal oxide layer is grown directly on a support layer; wherein the metal oxide layer has a thickness of less than 5 nm and is selected from the group consisting of Al2O3, HfO2, MgO, MgAl2O4, Ta2O5, Y2O3, ZrO2 and YSZ; and wherein the support layer is one or more layers of BN, AlN, GaN, SiC and diamond.
Bibliography:Application Number: GB20210010031