Semiconductor device and method of manufacturing semiconductor device

The technology indicated in the present specification relates to a semiconductor device and a manufacturing method therefor, and a purpose thereof is to provide a semiconductor device that has a high heat dissipation ability. A semiconductor device according to the technology indicated in the presen...

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Bibliographic Details
Main Authors Koji Yoshitsugu, Eiji Yagyu, Keisuke Nakamura
Format Patent
LanguageEnglish
Published 02.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The technology indicated in the present specification relates to a semiconductor device and a manufacturing method therefor, and a purpose thereof is to provide a semiconductor device that has a high heat dissipation ability. A semiconductor device according to the technology indicated in the present specification comprises a diamond substrate (23) and nitride semiconductor layers (2, 3). The diamond substrate (23) comprises diamond. The nitride semiconductor layers (2, 3) are formed in the interiors of recesses (17) that are formed in an upper surface (109) of the diamond substrate (23).
Bibliography:Application Number: GB20200020038