Photovoltaic device

A photovoltaic device comprises a p-i-n structure comprising a substrate 1, a p-type layer 2, a perovskite layer 3 and an n-type layer 4 arranged in sequence. A light transmissive electrically conductive layer 9 is provided on top of the n-type layer to form a light receiving top surface. A structur...

Full description

Saved in:
Bibliographic Details
Main Authors Ben Williams, Nicola Beaumount, Edward James Williams Crossland
Format Patent
LanguageEnglish
Published 18.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A photovoltaic device comprises a p-i-n structure comprising a substrate 1, a p-type layer 2, a perovskite layer 3 and an n-type layer 4 arranged in sequence. A light transmissive electrically conductive layer 9 is provided on top of the n-type layer to form a light receiving top surface. A structure comprising a layer of conductive material 7 positioned between two inorganic electrically insulative layers 6, 8 is provided between the n-type layer 4 and the conductive light transmissive layer 9. The insulative layers comprise a material having a band gap greater than 4.5 eV, and form a type-1 offset junction with the layer of conductive material. The insulative layer may comprise aluminium oxide, and the layer of conductive material may comprise tin oxide, zinc oxide, zinc tin oxide, titanium oxide or indium oxide. A photovoltaic device comprising a Cu(In,Ga)Se2 (CIGS) or Cu2ZnSn(S,Se)4 (CZTS, CZTSe) p-n junction and the trilayer interfacial structure is also claimed.
Bibliography:Application Number: GB20190006926