Cross-linked polymers

A gate dielectric for organic transistor devices is formed by depositing a layer of acrylol or methacrylol precursor material on a semiconductor layer and exposing the precursor layer to an argon plasma to produce a cross-linked polymer.

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Bibliographic Details
Main Authors Joffrey Dury, Jan Jongman, Herve Vandekerckhove
Format Patent
LanguageEnglish
Published 12.12.2018
Subjects
ELECTRICITY
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Summary:A gate dielectric for organic transistor devices is formed by depositing a layer of acrylol or methacrylol precursor material on a semiconductor layer and exposing the precursor layer to an argon plasma to produce a cross-linked polymer.
Bibliography:Application Number: GB20170004102