Vapor delivery system

• Main Authors: Adam Bertuch, Michael Ruffo
• Format: Patent
• Language: English
• Published: 21.12.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An improved ALD system usable for low vapor pressure liquid and sold precursors. The ALD system includes a precursor container and inert gas delivery elements configured to increase precursor vapor pressure within a precursor container by injecting an inert gas pulse into the precursor container while a precursor pulse is being removed to the reaction chamber. A controllable inert gas flow valve and a flow restrictor are disposed along an inert gas input line leading into the precursor container below its fill level. A vapor space is provided above the fill level. An ALD pulse valve is disposed along a precursor vapor line extending between the vapor space and the reaction chamber. Both valves are pulsed simultaneously to synchronously remove precursor vapor from the vapor space and inject inert gas into the precursor container below the fill level.