Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment

Embodiments are directed to forming a structure comprising at least one fin, a gate, and a spacer, applying an annealing process to the structure to create a gap between the at least one fin and the spacer, and growing an epitaxial semiconductor layer in the gap between the spacer and the at least o...

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Bibliographic Details
Main Authors Zuoguang Liu, Veeraraghavan S Basker, Chun-Chen Yeh, Tenko Yamashita
Format Patent
LanguageEnglish
Published 05.10.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments are directed to forming a structure comprising at least one fin, a gate, and a spacer, applying an annealing process to the structure to create a gap between the at least one fin and the spacer, and growing an epitaxial semiconductor layer in the gap between the spacer and the at least one fin.
Bibliography:Application Number: GB20160012148