Improved metal to metal bonding for stacked (3D) integrated circuits
The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface 310 usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibil...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
21.10.2015
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface 310 usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility. |
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| AbstractList | The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface 310 usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility. |
| Author | MUKTA G FAROOQ TIEN-JEN J CHENG JOHN A FITZSIMMONS |
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| RelatedCompanies | INTERNATIONAL BUSINESS MACHINES CORPORATION |
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| Snippet | The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface 310 usable for bonding a 3D stacked... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Improved metal to metal bonding for stacked (3D) integrated circuits |
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