Improved metal to metal bonding for stacked (3D) integrated circuits

The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface 310 usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibil...

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Bibliographic Details
Main Authors TIEN-JEN J CHENG, MUKTA G FAROOQ, JOHN A FITZSIMMONS
Format Patent
LanguageEnglish
Published 21.10.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a stabilized fine textured metal microstructure that constitutes a durable activated surface 310 usable for bonding a 3D stacked chip. A fine-grain layer that resists self anneal enables metal to metal bonding at moderate time and temperature and wider process flexibility.
Bibliography:Application Number: GB20150013842