Replacement gate electrode with planar work function material layers

In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gat...

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Bibliographic Details
Main Authors JUN YUAN, SHU-JEN HAN, DECHAO GUO, KEITH KWONG HON WONG
Format Patent
LanguageEnglish
Published 11.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function material portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Bibliography:Application Number: GB20140002956