Magnonic magnetic random access memory device

A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the ins...

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Bibliographic Details
Main Authors DANIEL C WORLEDGE, NILADRI N MOJUMDER, DAVID W ABRAHAM
Format Patent
LanguageEnglish
Published 07.10.2015
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.
Bibliography:Application Number: GB20130020115