Doped graphene films with reduced sheet resistance

• Main Authors: Ali Afzali-Ardakani, Ageeth Anke Bol, George Stojan Tulevski
• Format: Patent
• Language: English
• Published: 08.03.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CABLES; CONDUCTORS; ELECTRICITY; INSULATORS; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.