Doped graphene films with reduced sheet resistance

Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution h...

Full description

Saved in:
Bibliographic Details
Main Authors Ali Afzali-Ardakani, Ageeth Anke Bol, George Stojan Tulevski
Format Patent
LanguageEnglish
Published 08.03.2017
Subjects
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRICITY
INSULATORS
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
Bibliography:Application Number: GB20130003286