Interdigitated vertical parallel capacitor

• Main Authors: EBENEZER E ESHUN, ZHONG-XIANG HE, ROGER A BOOTH JR, DOUGLAS D COOLBAUGH
• Format: Patent
• Language: English
• Published: 23.05.2012
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the at least one second metal line. The at least one first metal line does not vertically contact any metal via and at least one second metal line may vertically contact at least one metal via. Multiple layers of interdigitated structure may be vertically stacked. Alternately, an interdigitated structure may include a plurality of first metal lines and a plurality of second metal lines, each metal line not vertically contacting any metal via. Multiple instances of interdigitated structure may be laterally replicated and adjoined, with or without rotation, and/or vertically stacked to form a capacitor.