Photodetecting pixel

A pixel 30 includes a substrate 32 of a first conductivity type, a photodetector 34 of a second opposite conductivity type, a floating diffusion 36 of the second conductivity type and a transfer region 38. A transfer gate 40 formed over the transfer region 38 partially overlaps the photodetector 34....

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Bibliographic Details
Main Authors THOMAS E DUNGAN, JOHN H STANBACK, CHINTAMANI P PALSULE, FREDRICK P LAMASTER
Format Patent
LanguageEnglish
Published 03.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:A pixel 30 includes a substrate 32 of a first conductivity type, a photodetector 34 of a second opposite conductivity type, a floating diffusion 36 of the second conductivity type and a transfer region 38. A transfer gate 40 formed over the transfer region 38 partially overlaps the photodetector 34. A pinning layer 46 of the first conductivity type extends across the photodetector 34 from the gate 40. A channel region 48 of the first conductivity type extends from a midpoint of the gate 40 across the photodetector 34 and has a doping profile such that the dopant concentration of the transfer region 38 proximate to the photodetector 34 is higher than that proximate to the floating diffusion 36. The pixel may also include anti-punchthrough implants 70 72 doped such that the dopant concentration of the substrate 32 proximate to the floating diffusion 36 is higher than that proximate to the photodetector 34.
Bibliography:Application Number: GB20060010638