A semiconductor device with a trench

A trench 2 in a semiconductor device is provided with lateral recesses 30 in one or both of its sidewalls which provide discrete localised increases in trench width. When the trench is filled, e.g. by CVD with polysilicon, the formation of voids is thereby avoided. The recesses may have a rectilinea...

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Bibliographic Details
Main Authors PAUL JERRED, KEVIN LOWE, LEE RILEY, PETER BLAIR
Format Patent
LanguageEnglish
Published 08.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A trench 2 in a semiconductor device is provided with lateral recesses 30 in one or both of its sidewalls which provide discrete localised increases in trench width. When the trench is filled, e.g. by CVD with polysilicon, the formation of voids is thereby avoided. The recesses may have a rectilinear, triangular or arcuate cross-section and extend to the bottom of the trench.
Bibliography:Application Number: GB20040017024