Semiconductor device comprising graded composition SiGe layer

A semiconductor device comprises a Si substrate 10 and a compound layer 11 of Si1-xGex disposed on the substrate 10. The composition of the layer 11 is varied from x = 0 to x = 0.2 from the substrate 10 to the upper surface of the layer 11, with the rate of change of x increasing through the layer....

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Bibliographic Details
Main Authors MAURICE HOWARD FISHER, BENOIT ALFRED LOUIS ROUMIGUIERES, ALED OWEN MORGAN
Format Patent
LanguageEnglish
Published 17.08.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprises a Si substrate 10 and a compound layer 11 of Si1-xGex disposed on the substrate 10. The composition of the layer 11 is varied from x = 0 to x = 0.2 from the substrate 10 to the upper surface of the layer 11, with the rate of change of x increasing through the layer. The rate of change of x may be linear (fig. 3) or non-linear with the distance D through the layer 11. The variation in the composition of the layer 11 is brought about by decreasing the deposition temperature with the distance D through the layer 11. The increasing rate of change of x significantly improves the defectivity levels and the surface roughness at the surface of layer 11.
Bibliography:Application Number: GB20040003190