Stabilised cyclosiloxanes for use as precursors for low-dielectric constant thin films

A stabilised siloxane dielectric precursor, for use in a chemical vapour deposition (CVD) process, dosed with a stabilising agent or agents selected from free radical inhibitors, end-capping agents or a mixture thereof. Preferred siloxane dielectric precursors are cyclosiloxanes such as polyhedral o...

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Bibliographic Details
Main Authors TIANNIU CHEN, CHONGYING XU, THOMAS H BAUM, ALEXANDER S. BOROVIK, RAVI K. LAXMAN
Format Patent
LanguageEnglish
Published 02.03.2005
Edition7
Subjects
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Summary:A stabilised siloxane dielectric precursor, for use in a chemical vapour deposition (CVD) process, dosed with a stabilising agent or agents selected from free radical inhibitors, end-capping agents or a mixture thereof. Preferred siloxane dielectric precursors are cyclosiloxanes such as polyhedral oligomeric silsesquioxanes (POSS), octamethylcyclotetrasiloxane (OMCTS), hexamethylcyclotetrasiloxane (HMCTS), tetramethylcyclotetrasiloxane (TMCTS) and mixtures thereof. Suitable end-capping agents are monofunctional silylating agents having a formula R R R SiX, wherein X is a reactive site and R -R are hydrogen, C1-C8 alkyl or C5-C12 aryl, preferably silyl-N-methylacetamides, naphthylphenylmethylsilanol (NPMS), trifluoropropyldimethylsilyl-N-methylacetamide (TFSA), bis(trimethylsilyloxy)methylsilane or hexamethyldisilazane. Suitable radical inhibitors include phenols such as butylated hydroxy toluene (BHT), hydroquinone or butylated hydroxyanisole (BHA), and diphenylamine. A process for stabilizing a cyclosiloxane dielectric precursor, optionally including azeotropic distillation and/or treatment with an absorbent bed material such as CaO, and a CVD process using the stabilised cyclosiloxane are also outlined.
Bibliography:Application Number: GB20040018732