Layers Having Interference Effect
A method for forming a base for a decorative layer comprising depositing a first material 801 capable of forming an interference metal oxide onto a second material 802 capable of forming an anodic oxide. The first material may be one of Nb, Ta, or an Al/Ti alloy. The second material may comprise Nb,...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
06.10.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method for forming a base for a decorative layer comprising depositing a first material 801 capable of forming an interference metal oxide onto a second material 802 capable of forming an anodic oxide. The first material may be one of Nb, Ta, or an Al/Ti alloy. The second material may comprise Nb, Ta, Al, Ti or their alloys, and is preferably a layer on a substrate. Ion implantation may be performed on the substrate prior to deposition of the second material.Also claimed is a method of forming a decorative layer comprising forming a base as above and anodising the first material to form an oxide layer 803 that may cause light interference, using a citric acid or ammonium pentaborate electrolyte. The decorative layer may be protected by an additional layer, such as silica. The decorative layer is preferably formed on a polymer substrate. |
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Bibliography: | Application Number: GB20030008630 |