Copper interconnects with copper silicide layer

A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film 35, converts the exposed Cu surface if a Cu interconnect structure 10, to copper silicide 29. The copper silicide 29 suppresses Cu diffusion and electro migration and serves as a barrier mat...

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Main Authors SAILESH MANSINH MERCHANT, DEEPAK A RAMAPPA, KURT GEORGE STEINER, ROBERT WAYNE BRADSHAW, DANIELE GILKES
Format Patent
LanguageEnglish
Published 14.01.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silane passivation process, carried out in-situ together with the formation of a subsequent dielectric film 35, converts the exposed Cu surface if a Cu interconnect structure 10, to copper silicide 29. The copper silicide 29 suppresses Cu diffusion and electro migration and serves as a barrier material in regions where contact to further conductive material is made. An entire copper surface of a copper interconnect structure may be silicided or a local portion of the surface silicided after an opening is formed in an overlying dielectric 35 to expose a portion of the copper surface. The copper silicide 29 also acts as an improved adhesion layer between the copper silicide surface 25 and dielectric film 35.
Bibliography:Application Number: GB20030009476